A-SSCC2017 Panel Discussion

Tuesday, November 7

Organizer / Co-organizer

Junghwan Choi, Samsung

Abstract

"Future of Memory System and Technology"

Recently, Semiconductor memory is very successful in business but its future should be carefully studied. There have been many studies and reports about new materials(STT-MRAM, R-RAM, P-RAM, etc), new devices(FinFET), 3D/2.5D packaing, new circuits and architectures for the next generation memory. New mainstream technologies such as AI and Big Data Analysis may need different memory principle, material, architecture and circuit. Many proposals have been reported such as PIM, HBM and X-point, and in this panel, the future of memory circuits and systems will be discussed.

- What is the best material and best device for the nest generation memory?
- Are circuit innovations such as high speed I/O and HBM still good for the next generation memory?
- Do we need the Process-In-Memory for the next main applications?
- What are the good memory architectures for the mobile and wearable applications?

Moderator

Ken Takeuchi, Professor, Chuo University

Panelists / Position

1. Introduction : Ken Takeuchi (Chuo University)
2. 3D Stack : (Package) Tae Je Cho (Samsung Electro-Mechanics)
3. Circuits : (HBM) Daeyong Shim (SK Hynix)
4. Systems : (PIM) Meng-Fan Chang (National Tsing Hua University)
5. Applications : (AI and Big Data) Kihong Kim (SAP Korea VP)